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HAT2173N
Silicon N Channel Power MOS FET Power Switching
REJ03G1684-0100 Rev.1.00 May 28, 2008
Features
* * * * Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 12.3 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i)
1(S) 2(S) 3(S) 4(G) 5678 DDDD
2X XX
8(D) 7(D) 6(D) 5(D)
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse) Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg Ratings 100 20 25 100 25 25 62.5 30 4.17 150 -55 to +150 Unit V V A A A A mJ W
C/W C C
REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 1 of 7
HAT2173N
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 20 -- -- 4.0 -- -- 27 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 12.3 13.3 45 4350 520 150 0.5 61 23 14.5 20 15 37 5.7 0.82 55 Max -- -- 10 1 6.0 15.3 17.8 -- -- -- -- -- -- -- -- -- -- -- -- 1.07 -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 40 V, VGS = 0 VDS = 10 V, ID = 20mA ID = 12.5 A, VGS = 10 V Note4 ID = 12.5 A, VGS = 8 V Note4 ID = 12.5 A, VDS = 10 V Note4 VDS = 10 V,VGS = 0, f = 1 MHz
VDD = 50 V, VGS = 10 V, ID = 25 A VGS = 10 V, ID = 12.5 A, VDD 30 V, RL = 2.4 , Rg = 4.7 IF = 25 A, VGS = 0 Note4 IF = 25 A, VGS = 0 diF/ dt = 100 A/ s
REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 2 of 7
HAT2173N
Main Characteristics
Power vs. Temperature Derating
40 500 100 30
10 10 s 1 m 0 s s DC = 1 Op 0 m s er at ion
PW
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
10
20
1
Operation in this area is 0.1 limited by RDS(on) Tc = 25C 1 shot Pulse
10
0
50
100
150
200
0.01 0.1 0.3
1
3
10
30
100
500
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50 10 V 8V 6.2 V 5.8 V Pulse Test 6.0 V 50
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
40
40
30
30 25C Tc = 75C 10 -25C
20
5.6 V 5.4 V
VGS = 5.0 V
20
10
5.2 V 8 10 0 2 4 6 8 10
0
2
4
6
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance RDS(on) (m)
100 Pulse Test 50
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Voltage VDS(on) (mV)
500 Pulse Test 400
300 ID = 50 A 200 20 A 100 10 A
20 10 5
VGS = 8 V 10 V
2 1 1 3 10 30 100
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 3 of 7
HAT2173N
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
50 Pulse Test 40 ID = 5 A, 10 A, 20 A 1000 300 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 VDS = 10 V Pulse Test 10 30 100 25C Tc = -25C 75C
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
30
20 VGS = 8 V 10 0 -25 10 V 5 A, 10 A, 20 A
0
25
50
75
100 125 150
Case Temperature Tc (C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
10000 Ciss 3000 1000 300 100 30 10 0 10 20 30 Coss Crss
Body-Drain Diode Reverse Recovery Time
100
Reverse Recovery Time trr (ns)
50
20 di / dt = 100 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100
Capacitance C (pF)
VGS = 0 f = 1 MHz 40 50
10 0.1
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
250 ID = 25 A VDD = 100 V 50 V 25 V VGS 20 1000 300 100
Switching Characteristics
200
16 12
Switching Time t (ns)
tf td(off)
150 VDS = 100 V 100 50 V 25 V VDD 0 20 40 60 80
30 td(on) 10 3 tr VGS = 10 V, VDS = 10 V Rg = 4.7 , duty 1 % 2 5 10 20 50 100
8
50
4 0 100
1 0.1 0.2 0.5 1
Gate Charge Qg (nc)
Drain Current ID (A)
REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 4 of 7
HAT2173N
Reverse Drain Current vs. Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
50 100 IAP = 25 A VDD = 50 V duty < 0.1 % Rg 50
Maximum Avalanche Energy vs. Channel Temperature Derating
Reverse Drain Current IDR (A)
40 10 V 30
80
60
20
5V V GS = 0 Pulse Test
40
10
20 0 25
0
0.4
0.8
1.2
1.6
2.0
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
ch - c(t) = s (t) * ch - c ch - c = 4.17C/ W, Tc = 25C PDM
t ho pu lse
0.05
0.03
0.02 1 0.0
1s
D= PW T
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 5 of 7
HAT2173N
Avalanche Test Circuit
VDS Monitor L EAR = IAP Monitor Rg Vin 15 V D. U. T VDD V(BR)DSS IAP VDS ID
Avalanche Waveform
1 L * IAP2 * 2 VDSS VDSS - VDD
50
0
VDD
Switching Time Test Circuit Vin Monitor Rg D.U.T. RL VDS = 30 V Vin Vout Vin 10 V Vout Monitor
Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10%
REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 6 of 7
HAT2173N
Package Dimensions
Package Name LFPAK-i JEITA Package Code RENESAS Code PTSP0008DC-A Previous Code LFPAK-iV MASS[Typ.] 0.080g
4.9 5.3Max 8 5
0.25 - 0.03
+ 0.05
3.2
0.60 - 0.30
+ 0.25
1 3.3
4 0.20 - 0.03
+ 0.05
6.1 - 0.3
3.95
+ 0.1
0 - 8
1.1Max
0.07 - 0.04
+ 0.03
0.75Max 1.27 0.10 0.4 0.06 0.25 M ( Ni/Pd/Au plating )
Ordering Information
Part No. HAT2173N-EL-E Quantity 2500 pcs Taping Shipping Container
REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 7 of 7
1.3Max
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2

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